Transistor - 2N3055, High Power NPN Silicon, TO-3 Case

Transistor - 2N3055, High Power NPN Silicon, TO-3 Case

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$3.85
In Stock

15 A, 60 V, 115 W

EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.

  • Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
  • Safe Operating Area - Full Power Rating to 40 V
SKU:
P-Q2N3055
Item ID:
003207
UPC/EAN:
609722154673
Element:
Matched Pair:
Package:
Polarity:
Series:
Type:
Base-emitter Voltage (VBE)1.8 V
Base Current (IB)7 A
Collector-base voltage rating @ IC = 0 (VEBO)7 V
Collector-emitter Saturation Voltage (VCE(sat))1 V - 3 V
Collector-emitter sustaining voltage @ IB = 0 (VCEO(sus))60 V
Collector-emitter sustaining voltage @ RBE = 100Ω (VCER(sus))60 V
Collector-emitter voltage rating @ IB = 0 (VCEO)60 V
Collector-emitter voltage rating @ IE = 0 (VCBO)100 V
Collector-emitter voltage rating @ RBE = 100 Ω (VCER)70 V
Collector Current (IC)15 A
Collector cut-off current @ IB = 0 (ICEO)0.7 mA
Collector cut-off current @ VBE = -1.5 V (ICEX)1 mA - 5 mA
D.C. Current Gain (hFE)20 - 70
Emitter Cut-off Current (IEBO)5 mA
Operating Temperature (TJ)200°C
Total Dissipation @ TC ≤ 25°C (PTOT)115 W
storage temperature (Tstg)-65°C to 200°C
Packaging Information
Packaging Dimensions1.5 in. × 0.8 in. × 1 in.
Weight (Packaging)0.0287 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet88.07 KB
Questions? Contact us at [email protected], or give us a call at 480-820-5411

Product Reviews

3.00 out of 5 based on 1 reviews
Alex g - December 1st, 2021
3 out of 5

I’ve been using these transistors in amplifier projects for a long time (since there was a Radioshack!) and they do a great job as drivers for reverb tanks and in audio applications not exceeding 10-15 watts. The only warning I have is to not exceed 20vdc supply or you will eventually burn these out, beyond that point you must be careful.