Transistor - MJ15015, NPN, Complementary High-Power
Transistor MJ15015, TO-3 Case, NPN
PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc–to–dc converters, inverters, or for inductive loads requiring higher safe operating areas.
Safe Operating Area - Rated to 60V
Base-emitter On Voltage (VBE(on)) | 0.7 V - 1.8 V | ||
Base Current (IB) | 7.0 A | ||
Collector-base Voltage (VCBO) | 200 V | ||
Collector-emitter Saturation Voltage (VCE(sat)) | 1.1 V | ||
Collector-emitter Sustaining Voltage (VCEO(sus)) | 120 V | ||
Collector-emitter Voltage (VCEO) | 120 V | ||
Collector-emitter Voltage Base Reverse Biased (VCEV) | 200 V | ||
Collector Current (IC) | 15 A | ||
Collector Cut-off Current (ICEO) | 0.1 mA | ||
Current Gain - Bandwidth Product (fT) | 0.8 MHz - 6.0 MHz | ||
D.C. Current Gain (hFE) | 10 - 70 | ||
Delay Time (td) | 0.5 μs | ||
Emitter-base Voltage (VEBO) | 7.0 V | ||
Emitter Cut-off Current (IEBO) | 0.2 mA | ||
Fall Time (tf) | 6.0 μs | ||
Operating And Storage Temperature (TJ, TSTG) | -65°C to 200°C | ||
Output Capacitance (COB) | 60 pF - 600 pF | ||
Rise Time (tr) | 4.0 μs | ||
Storage Time (ts) | 3.0 μs | ||
Thermal Resistance, junction to case (RθJC) | ≤ 1.52°C/W | ||
Total Device Dissipation @ TA = 25°C (PD) | 180 W |
Packaging Dimensions | 1.6 in. × 1 in. × 0.9 in. | ||
Weight (Packaging) | 0.0287 lbs. |
Specification Sheet | All Models |
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