Diode - General purpose rectifier, 1A, 1N400X
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Starting at: $0.25
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A semiconductor device which passes current in the forward direction (from anode to cathode), and blocks current in the opposite direction.
Features:
- Low forward voltage drop
- High surge current capability
| Peak Reverse Voltage (VRRM) | Our Part Number | UPC/EAN |
|---|---|---|
| 50 V | P-Q1N4001 | |
| 600 V | P-Q1N4005 | 609722129831 |
| 800 V | P-Q1N4006 | 841358103018 |
| 1000 V | P-Q1N4007 | 609722129848 |
| Forward Voltage @ 1.0 A (VF) | 1.1 V | ||
| Full Load Reverse Current, maximum, Full Cycle (Irr) | 600 V version | P-Q1N4005 | 30 μA |
| 800 V version | P-Q1N4006 | 30 μA | |
| 1000 V version | P-Q1N4007 | 30 μA | |
| Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | ||
| Operating Temperature (TJ) | -55°C to 175°C | ||
| Peak Repetitive Reverse Voltage (VRRM) | 50 V version | P-Q1N4001 | 50 V |
| 600 V version | P-Q1N4005 | 600 V | |
| 800 V version | P-Q1N4006 | 800 V | |
| 1000 V version | P-Q1N4007 | 1,000 V | |
| Power Dissipation (PD) | 600 V version | P-Q1N4005 | 3.0 W |
| 800 V version | P-Q1N4006 | 3.0 W | |
| 1000 V version | P-Q1N4007 | 3.0 W | |
| Rating for Fusing (I2t) | 50 V version | P-Q1N4001 | 3.6 A2sec |
| 600 V version | P-Q1N4005 | 3.7 A2sec | |
| 800 V version | P-Q1N4006 | 3.7 A2sec | |
| 1000 V version | P-Q1N4007 | 3.7 A2sec | |
| Rectified Forward Current, average (IF) | 1.0 A | ||
| Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | ||
| Reverse Current @ Rated VR, TA = 100 °C | 50 μA | ||
| Thermal Resistance, junction to ambient (RθJA) | 600 V version | P-Q1N4005 | 50°C/W |
| 800 V version | P-Q1N4006 | 50°C/W | |
| 1000 V version | P-Q1N4007 | 50°C/W | |
| Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | ||
| storage temperature (Tstg) | 600 V version | P-Q1N4005 | -55°C to 175°C |
| 800 V version | P-Q1N4006 | -55°C to 175°C | |
| 1000 V version | P-Q1N4007 | -55°C to 175°C |
| Packaging Dimensions | 2.3 in. × 0.1 in. × 0.1 in. | ||
| Weight (Packaging) | 50 V version | P-Q1N4001 | 0.001 lbs. |
| 600 V version | P-Q1N4005 | 0.001 lbs. | |
| 800 V version | P-Q1N4006 | 0.0002 lbs. | |
| 1000 V version | P-Q1N4007 | 0.001 lbs. |
| P-Q1N4005 - 600 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
| Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
| Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
| Operating Temperature (TJ) | -55°C to 175°C | |
| Peak Repetitive Reverse Voltage (VRRM) | 600 V | |
| Power Dissipation (PD) | 3.0 W | |
| Rating for Fusing (I2t) | 3.7 A2sec | |
| Rectified Forward Current, average (IF) | 1.0 A | |
| Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
| Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
| Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
| Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
| storage temperature (Tstg) | -55°C to 175°C | |
| P-Q1N4006 - 800 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
| Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
| Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
| Operating Temperature (TJ) | -55°C to 175°C | |
| Peak Repetitive Reverse Voltage (VRRM) | 800 V | |
| Power Dissipation (PD) | 3.0 W | |
| Rating for Fusing (I2t) | 3.7 A2sec | |
| Rectified Forward Current, average (IF) | 1.0 A | |
| Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
| Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
| Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
| Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
| storage temperature (Tstg) | -55°C to 175°C | |
| P-Q1N4007 - 1000 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
| Full Load Reverse Current, maximum, Full Cycle (Irr) | 30 μA | |
| Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
| Operating Temperature (TJ) | -55°C to 175°C | |
| Peak Repetitive Reverse Voltage (VRRM) | 1,000 V | |
| Power Dissipation (PD) | 3.0 W | |
| Rating for Fusing (I2t) | 3.7 A2sec | |
| Rectified Forward Current, average (IF) | 1.0 A | |
| Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
| Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
| Thermal Resistance, junction to ambient (RθJA) | 50°C/W | |
| Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF | |
| storage temperature (Tstg) | -55°C to 175°C | |
| P-Q1N4001 - 50 V version | Forward Voltage @ 1.0 A (VF) | 1.1 V |
| Non-repetitive Peak Forward Surge Current (IFSM) | 30 A | |
| Operating Temperature (TJ) | -55°C to 175°C | |
| Peak Repetitive Reverse Voltage (VRRM) | 50 V | |
| Rating for Fusing (I2t) | 3.6 A2sec | |
| Rectified Forward Current, average (IF) | 1.0 A | |
| Reverse Current @ Rated VR, TA = 25 °C | 5.0 μA | |
| Reverse Current @ Rated VR, TA = 100 °C | 50 μA | |
| Total Capacitance @ VR = 4.0 V, f = 1.0 MHz (CT) | 15 pF |
 Datasheet for 50 V | P-Q1N4001 |
| Specification Sheet for 1000 V | P-Q1N4007 |
| Specification Sheet for 600 V | P-Q1N4005 |
| Specification Sheet for 800 V | P-Q1N4006 |
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Questions and Answers
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1 answers
Hi:
I'm restoring a Zenith Transoceanic H500 radio and to replace the selenium rectifier it is recommended to use a 1N4005 or 1N4007 diode. Is this diode the equivalent of these two?
Thanks,
Scott
Asked by Anonymous on November 22nd, 2021.
November 30th, 2021
Staff Member
This listing is for the entire series of rectifiers, and there are various options available. Both the 1N4005 and the 1N4007 are available in the drop down menu.
Product Reviews
I used the 1N4007 to rebuild a solid state rectifier on a 67 Fender Bandmaster amp, the physical size is about the same as the originals. They seem to be identical as some that I've bought from other amp part vendors.
Rebuilt the power supply in an Orange OR120(which originally had in4005 diodes)and had issues blowing the main fuse. As it has no standby switch I replaced all 8 of them with in4007's, which handle 1000v as opposed to the 4005's 600v. With new power supply caps, it's so far so good and working well.