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Semiconductors

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P-Q1N4007Diode - 1A 1000V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.15
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P-L300XLED - 3mm (Package of 5)
Colors Available:

Package of 5. Color: Yellow, red, or green Lens Diam: 3 mm Overall Height: 5.4 mm Lens Type: Diffused Multiple color options available.


$0.65
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P-Q1N5408Diode - 1N5408

1N5408 Diode



  • 1000V
  • 3A

$0.35
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P-Q972Diode - 1N34A Germanium, Sold individually
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$1.75
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P-QBR-34Rectifier - Bridge, 3A 400V
A full wave rectifier with 4 elements in a bridge circuit so that DC voltage is obtained from one pair of junctions when an AC voltage is applied to another pair of junctions.
$0.95
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P-Q1N4005Diode - 1A 600V

A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.


$0.15
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P-Q971Diode - 1N4148A
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.50
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P-Q1N4741ADiode - Zener, 1W, 11V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.15
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P-QPF5102Transistor - JFET N-Ch Transistor Lo Freq/Lo Noise, PF5102
PF5102 N-Channel Switch (TO-92 package) - designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. (See J111 for characteristics).
  • Max drain to gate voltage = 40 V
  • Max gate to source voltage = -40 V
  • Max forward gate current = 50 m
$0.40
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P-Q4558Integrated Circuit - 4558, Dual Op-Amp
Dual Operational Amplifier. The 4558 integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of the dual device in single NJM741 operational amplifier applications providing density. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matched channels are mandatory.
Features:
  • Operating Voltage ( ±4V~±18V )
  • High Voltage Gain ( 100dB typ. )
  • High Input Resistance ( 5MΩ typ. )
  • Bipolar Technology
$0.75
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(6 pages)
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