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P-L300XLED - 3mm (Package of 5)
Colors Available:

Package of 5. Color: Yellow, red, or green Lens Diam: 3 mm Overall Height: 5.4 mm Lens Type: Diffused Multiple color options available.


$0.65
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P-Q1N4005Diode - 1A 600V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.15
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P-Q1N4006Diode - 1A 800V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.20
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P-Q1N4007Diode - 1A 1000V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.15
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P-Q1N4741ADiode - Zener, 1W, 11V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.15
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P-Q1N4748ADiode - Zener, 1W, 22V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.15
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P-Q1N4937Diode - Fast Recovery, 1A, 600V
A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.
$0.20
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P-Q1N5404Diode - 3A 400V
A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.
$0.35
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P-Q1N5408Diode - 1N5408
1N5408 Diode 1000V 3A
$0.35
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P-Q2N3055Transistor - 2N3055, High Power NPN Silicon, TO-3 Case
15 A, 60 V, 115 W
EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.
  • Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
  • Safe Operating Area - Full Power Rating to 40 V
$2.25
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