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P-L300XLED - 3mm diameter, diffused lens
Package of 5
Colors Available:

Lens Diameter: 3 mm Overall Height: 5.4 mm Lens Type: Diffused Multiple color options available.


$0.65
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P-Q1N400XDiode - General purpose rectifier, 1A, 1N4005, 1N4006, 1N4007

A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.


Starting at $0.15
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P-Q1N474XDiode - Zener, 1W, 1N4741A, 1N4748A

A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.


$0.15
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P-Q1N4937Diode - Fast Recovery, 1A, 600V, 1N4937

A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.


$0.20
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P-Q1N5404Diode - Silicon Rectifier, 3A, 400V, 1N5404

A semiconductor device which passes current in the forward direction(from anode to cathode), and blocks current in the opposite direction.


$0.35
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P-Q1N5408Diode - standard recovery rectifier, 3A, 1000V, 1N5408

1N5408 Diode. Lead mounted standard recovery rectifiers are designed for use in power supplies and other applications having need of a device with the following features:



  • High Current to Small Size
  • High Surge Current Capability
  • Low Forward Voltage Drop

$0.38
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P-Q2N3055Transistor - 2N3055, High Power NPN Silicon, TO-3 Case
15 A, 60 V, 115 W
EPIBASE - Designed for power amplifier and switching regulator applications. The best choice where high frequency response, low switching losses and good safe operating area are required.
  • Current Gain - Bandwidth Product - fT = 2.5 MHz (Min) @ Ic = 1.0 Adc
  • Safe Operating Area - Full Power Rating to 40 V
$2.25
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P-Q2N5088Transistor - 2N5088, Bipolar, General Purpose

2N5088 NPN Bipolar Junction Transistor in TO-92 package


$0.20
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P-Q2N5400Transistor - Peavey, 2N5400, PNP Amp, 120V, 20MA, TO-92

2N5400 (761), PNP general purpose amp, 120V, 10mA, TO-92 case.


$0.45
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P-Q4558Op-Amp - 4558, Dual, 8-Pin DIP

Dual Operational Amplifier. The 4558 integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allows the use of the dual device in single NJM741 operational amplifier applications providing density. It is especially well suited for applications in differential-in, differential-out as well as in potentiometric amplifiers and where gain and phase matched channels are mandatory. Features:



  • Operating Voltage (±4V~±18V)
  • High Voltage Gain (100dB typ.)
  • High Input Resistance (5MΩ typ.)
  • Bipolar Technology

$0.75
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