Synth & Eurorack Parts / DIY

The CD4053B analog multiplexers are digitally-controlled analog switches having low ON impedance and very low OFF leakage current.

The CD4066B device is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with the CD4016B device, but exhibits a much lower on-state resistance. In addition, the on-state resistance is relatively constant over the full signal-input range. The CD4066B device consists of four bilateral switches, each with independent controls. Both the p and the n devices in a given switch are biased on or off simultaneously by the control signal. As shown in Figure 17, the well of the n-channel device on each switch is tied to either the input (when the switch is on) or to VSS (when the switch is off).

The CD4069UB device consists of six CMOS inverter circuits. These devices are intended for all general-purpose inverter applications where the medium-power TTL-drive and logic-level-conversion capabilities of circuits such as the CD4009 and CD4049 hex inverter and buffers are not required. Features:

• Standardized symmetrical output characteristics
• Medium speed operation: tPHL, tPLH = 30 ns at 10 V (Typical)
• 100% Tested for quiescent current at 20 V
• Maximum input current of 1 µA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C
• Meets all requirements of JEDEC tentative standard No. 13B, Standard Specifications for Description of B Series CMOS Devices

The CD4070B contains four independent Exclusive-OR gates. The CD4070B provides the system designer with a means for direct implementation of the Exclusive-OR functions, respectively. Features:

• High-Voltage Types (20V Rating)
• CD4070B - Quad Exclusive-OR Gate
• Medium Speed Operation
• tPHL, tPLH = 65ns (Typ) at VDD = 10V, CL = 50pF
• 100% Tested for Quiescent Current at 20V
• Standardized Symmetrical Output Characteristics
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range
• 100nA at 18V and 25°C
• Noise Margin (Over Full Package Temperature Range)
• 1V at VDD = 5V, 2V at VDD = 10V, 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Standard No.

CD4071B OR gates provide the system designer with direct implementation of the positive-logic OR function and supplement the existing family of CMOS gates. Features:

• Medium-Speed Operation - tPLH, tPHL = 60 ns (typ.) at VDD = 10 V
• 100% tested for quiescent current at 20 V
• Maximum input current of 1 µA at 18 V over full package-temperature range; 100 nA at 18 V and 25°C
• Standardized, symmetrical output characteristics
• Noise margin (full package-temperature range):
  
  • 1 V at VDD = 5 V
  • 2 V at VDD = 10 V
  • 2.5 V at VDD = 15 V
• 5-V, 10-V, and 15-V parametric ratings
• Meets all requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of ’B’ Series CMOS Devices"

The CD4077B contains four independent Exclusive-NOR gates. The CD4077B provides the system designer with a means for direct implementation of the Exclusive-NOR functions, respectively. Features:

• High-Voltage Types (20V Rating)
• CD4077B - Quad Exclusive-NOR Gate
• Medium Speed Operation
• tPHL, tPLH = 65ns (Typ) at VDD = 10V, CL = 50pF
• 100% Tested for Quiescent Current at 20V
• Standardized Symmetrical Output Characteristics
• 5V, 10V and 15V Parametric Ratings
• Maximum Input Current of 1µA at 18V Over Full Package Temperature Range
• 100nA at 18V and 25°C
• Noise Margin (Over Full Package Temperature Range)
• 1V at VDD = 5V, 2V at VDD = 10V, 2.5V at VDD = 15V
• Meets All Requirements of JEDEC Standard No.

CD4081B AND gates, provide the system designer with direct implementation of the AND function and supplement the existing family of CMOS gates. Features:

• Medium-Speed Operation - tPLH, tPHL = 60 ns (typ.) at VDD = 10 V
• 100% tested for quiescent current at 20 V
• Maximum input current of 1 µA at 18 V over full package-temperature range: 100 nA at 18 V and 25°C
• Noise margin (full package-temperature range) =
  
  • 1 V at VDD = 5 V
  • 2 V at VDD = 10 V
  • 2.5 V at VDD = 15 V
• Standardized, symmetrical output characteristics
• 5-V, 10-V, and 15-V parametric ratings
• Meets all requirements of JEDEC Tentative Standard No. 13B, "Standard Specifications for Description of 'B' Series CMOS Devices"

CD4093B consists of four Schmitt-trigger circuits. Each circuit functions as a two-input NAND gate with Schmitt-trigger action on both inputs. The gate switches at different points for positive- and negative-going signals. The difference between the positive voltage (VP) and the negative voltage (VN) is defined as hysteresis voltage (VH). Features:

• Schmitt-trigger action on each input with no external components
• Hysteresis voltage typically 0.9 V at VDD = 5 V and 2.3 V at VDD = 10 V
• Noise immunity greater than 50%
• No limit on input rise and fall times
• Standardized, symmetrical output characteristics
• 100% tested for quiescent current at 20 V
• Maximum input current of 1 µA at 18 V over full package-temperature range, 100 nA at 18 V and 25°C
• 5-V, 10-V, and 15-V parametric ratings
• Meets all requirements of JEDEC Tentative Standard No.

CD4094B is an 8-stage serial shift register having a storage latch associated with each stage for strobing data from the serial input to parallel buffered 3-state outputs. The parallel outputs may be connected directly to common bus lines. Data is shifted on positive clock transitions. The data in each shift register stage is transferred to the storage register when the STROBE input is high. Data in the storage register appears at the outputs whenever the OUTPUT-ENABLE signal is high. Two serial outputs are available for cascading a number of CD4094B devices. Data is available at the QS serial output terminal on positive clock edges to allow for high-speed operation in cascaded systems in which the clock rise time is fast.

LM311 single comparator IC in an 8-pin DIP package. The LM311 device is a single high-speed voltage comparator. These devices are designed to operate from a wide range of power supply voltages, including ±15-V supplies for operational amplifiers and 5-V supplies for logic systems. The output levels are compatible with most TTL and MOS circuits. These comparators are capable of driving lamps or relays and switching voltages up to 50 V at 50 mA. All inputs and outputs can be isolated from system ground. The outputs can drive loads referenced to ground, VCC+ or VCC−. Offset balancing and strobe capabilities are available, and the outputs can be wire-OR connected.

Through-hole mount crystal with a 32.768 kHz (32768 Hz) frequency. This crystal has a 12.5pF capacitance and is housed in a 3mm x 8mm package that is commonly used with Spin FV-1 chips. Features:

• 32.768 kHz Frequency
• 3x8mm Cylinder Case
• Through Hole
• 12.5pF

Dial plates with 0-100 indicator marks. These plates are a simple way to add panel graphics to controls. They are easy to install beneath the nut of a potentiometer like a washer. The silk screened graphics on the brushed metal plate gives projects a clean and professional appearance. 40mm Dial Plate

• 40 mm (1.575”) outer diameter
• 9.95 mm (0.392”) inner diameter
• Best for 25.4mm (1”) or smaller knobs

60mm Dial Plate

• 60mm (2.362”) outer diameter
• 9.95mm (0.392”) inner diameter
• Best for 40.6 mm (1.59”) or smaller knobs

The 1N34A Germanium diode is an old standby in electronics. Widely used for detecting the rectifying efficiency or for switching on a radio, TV or stereo etc.

1N4739A 9.1V zener diode in a DO-41 package. A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.

1N4741A 11V zener diode in a DO-41 package. A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.

1N4742A 12V zener diode in a DO-41 package. A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.

1N4748A 22V zener diode in a DO-41 package. A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.

Schottky diode with low forward voltage drop and high switching speeds.

1N5818 schottky diode with low forward voltage drop and high switching speeds.

• Very small conduction losses
• Negligible switching losses
• Extremely fast switching
• Low forward voltage drop
• Avalanche capability specified

1N60 point-contact germanium diodes in a DO-7 package. 1N60 diodes were used in many vintage electronics and also make for great clipping diodes in stompbox effects pedals.

1N60 point-contact germanium diodes in a DO-7 package with striped clear glass. 1N60 diodes were used in many vintage electronics and also make for great clipping diodes in stompbox effects pedals.

The 1N914 is a small signal diode similar to the 1N4148 and is common in many older electronics. The 1N914 is general purpose and can be used in a multitude of different applications.

The BAT41 is a schottky diode used in many DIY projects. General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges.

A semiconductor device that, above a certain reverse voltage(the zener value) has a sudden rise in current. If forward biased, the diode is an ordinary rectifier. When reverse biased, it exhibits a sharp break in its current-voltage graph. Voltage across the diode remains essentially constant for any further increase of reverse current.