Transistor - 2N1711, Silicon, TO-39 case, NPN

Name: Transistor - 2N1711, Silicon, TO-39 case, NPN
SKU: P-Q2N1711
Price: 1.00 USD
Availability: InStock

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The 2N1711 is a silicon planar epitaxial NPN transistor in a TO-39 metal case. It is intended for use in high performance amplifiers, oscillators and switching circuits. The 2N1711 is a great choice for amplifiers where low noise is an important factor.

Pinout:

SKU:

P-Q2N1711

Item ID:

046110

Element:

Silicon

Matched Pair:

Package:

Polarity:

Series:

Type:

Accessory Items:

Max. Base Emitter Saturation Voltage			1.3 V
Max. Collector Base Voltage			75 V
Max. Collector Emitter Saturation Voltage			0.5 V
Max. Collector Emitter Voltage, RBE < 10Ω			50 V
Max. DC Current Gain (hFE) IC=150mA, VCE=10V			300
Max. Emitter Base Voltage			7 V
Max. Emitter Cutoff Current			5 nA
Max. Input Capacitance			80 pF
Max. Operating and Storage Junction Temperature Range			-65 to +200 ºC
Max. Output Capacitance			25 pF
Max. Power Dissipation at Ta=25ºC			800 mW
Max. Power Dissipation at Tc=25ºC			3 W
Min. DC Current Gain (hFE) C=500mA, VCE=10V			40
Min. DC Current Gain (hFE) IC=0.01mA, VCE=10V			20
Min. DC Current Gain (hFE) IC=0.1mA, VCE=10V			35
Min. DC Current Gain (hFE) IC=10mA, VCE=10V			75
Min. DC Current Gain (hFE) IC=10mA, VCE=10V, Ta= -55ºC			35
Min. DC Current Gain (hFE) IC=150mA, VCE=10V			100
Min. Transition Frequency			70 MHz
Noise Figure			8dB
Small Signal Current Gain (hfe) IC=1mA, VCB=5V, f=1KHz			50-200
Small Signal Current Gain (hfe) IC=5mA, VCB=10V, f=1KHz			70-300