Transistor - 2N5088, Bipolar, General Purpose

Transistor - 2N5088, Bipolar, General Purpose

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2N5088 NPN Bipolar Junction Transistor in TO-92 package

Item ID:
RoHS Compliant
Product Measurements by Type
Base-emitter On Voltage (VBE(on))0.8 V
Collector-base Voltage (VCBO)35 V
Collector-base breakdown voltage (V(BR)CBO)35 V
Collector-base capacitance (Ccb)4.0 pF
Collector-emitter Saturation Voltage (VCE(sat))0.5 V
Collector-emitter Voltage (VCEO)30 V
Collector-emitter breakdown voltage (V(BR)CEO)30 V
Collector Current (IC)100 mA
Collector Cut-off Current (ICBO)50 nA
Current Gain - Bandwidth Product (fT)50 MHz
D.C. Current Gain (hFE)300 - 900
Depth0.14 in.
Emitter-base Capacitance (Ceb)10 pF
Emitter-base Voltage (VEBO)4.5 V
Emitter Cut-off Current (IEBO)50 nA
Item Height0.18 in.
Item Width0.19 in.
Noise Figure (nf)3.0 dB
Operating And Storage Temperature (TJ, TSTG)-55°C to 150°C
Small-signal Current Gain (hfe)350 - 1400
Thermal Resistance, junction to ambient (RθJA)200°C/W
Thermal Resistance, junction to case (RθJC)83.3°C/W
Total Device Dissipation (PD)625 mW
Packaging Information
Packaging Dimensions0.302 in. × 0.302 in. × 0.138 in.
Weight (Packaging)0.001 lbs.

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PDF: Specification Sheet Specification Sheet83.52 KB

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