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Transistor - BC108, TO-18 case, NPN

Transistor - BC108, TO-18 case, NPN

Pictured: BC108C
Pictured: BC108C
Pictured: BC108A
Pictured: BC108A
Pictured: BC108B
Pictured: BC108B
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Pictured: BC108CPictured: BC108APictured: BC108B
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Starting at: $1.00
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BC108 NPN silicon transistors. The BC108 is a popular NPN choice for fuzz pedals and other effects such as vintage silicon Fuzz Face builds and Big Muff clones.



Type hFE (IC=2mA, VCE=5V) hfe (IC=2mA, VCE=5V, f=1KHz)
BC108A 110-220 125-260
BC108B 200-450 240-500
BC108C 420-800 450-900
  • NPN polarity
  • Collector emitter breakdown voltage 25V
  • Collector base breakdown voltage 30V
  • Collector current 200mA
  • Power 0.75W
  • Transition frequency 150MHz
  • TO-18 case
  • Weight 0.35g

Pinout (bottom view):

Pinout (bottom view)
Part Numbers
TypeOur Part Number
BC108AP-QBC108A
BC108BP-QBC108B
BC108CP-QBC108C
Product Measurements by Type
Collector Base VoltageBC108C versionP-QBC108C30 V
Collector Current ContinuousBC108C versionP-QBC108C200 mA
Collector Cutoff CurrentBC108C versionP-QBC108C<15 nA
Collector Emitter VoltageBC108C versionP-QBC108C>25 V
DC Current GainBC108A versionP-QBC108A110-220
BC108B versionP-QBC108B200-450
BC108C versionP-QBC108C420-800
Emitter Base VoltageBC108C versionP-QBC108C>5 V
Input ImpedanceBC108A versionP-QBC108A1.6-4.5 KΩ
BC108B versionP-QBC108B3.2-8.5 KΩ
BC108C versionP-QBC108C6.0-15 KΩ
Max. Collector Base VoltageBC108A versionP-QBC108A30 V
BC108B versionP-QBC108B30 V
Max. Collector Current ContinuousBC108A versionP-QBC108A200 mA
BC108B versionP-QBC108B200 mA
Max. Collector Emitter VoltageBC108A versionP-QBC108A25 V
BC108B versionP-QBC108B25 V
Max. Emitter Base VoltageBC108A versionP-QBC108A5 V
BC108B versionP-QBC108B5 V
Max. Operating and Storage Junction Temperature RangeBC108A versionP-QBC108A- 65 to +200 ºC
BC108B versionP-QBC108B- 65 to +200 ºC
Max. Power Dissipation @ Ta=25ºCBC108A versionP-QBC108A300 mW
BC108B versionP-QBC108B300 mW
Max. Power Dissipation @ Tc=25ºCBC108A versionP-QBC108A750 mW
BC108B versionP-QBC108B750 mW
Noise FigureBC108A versionP-QBC108A10 dB
BC108B versionP-QBC108B10 dB
Operating and Storage Junction Temperature RangeBC108C versionP-QBC108C- 65 to +200 ºC
Output AdmittanceBC108A versionP-QBC108A30 umhos max.
BC108B versionP-QBC108B60 umhos max.
BC108C versionP-QBC108C110 umhos max.
Power Dissipation @ Ta=25ºCBC108C versionP-QBC108C300 mW
Power Dissipation @ Tc=25ºCBC108C versionP-QBC108C750 mW
Packaging Information
Packaging Dimensions0.472 in. × 0.221 in. × 0.221 in.
Weight (Packaging)0.003 lbs.
Product Measurements by Item
P-QBC108A - BC108A versionDC Current Gain110-220
Input Impedance1.6-4.5 KΩ
Max. Collector Base Voltage30 V
Max. Collector Current Continuous200 mA
Max. Collector Emitter Voltage25 V
Max. Emitter Base Voltage5 V
Max. Operating and Storage Junction Temperature Range- 65 to +200 ºC
Max. Power Dissipation @ Ta=25ºC300 mW
Max. Power Dissipation @ Tc=25ºC750 mW
Noise Figure10 dB
Output Admittance30 umhos max.
P-QBC108B - BC108B versionDC Current Gain200-450
Input Impedance3.2-8.5 KΩ
Max. Collector Base Voltage30 V
Max. Collector Current Continuous200 mA
Max. Collector Emitter Voltage25 V
Max. Emitter Base Voltage5 V
Max. Operating and Storage Junction Temperature Range- 65 to +200 ºC
Max. Power Dissipation @ Ta=25ºC300 mW
Max. Power Dissipation @ Tc=25ºC750 mW
Noise Figure10 dB
Output Admittance60 umhos max.
P-QBC108C - BC108C versionCollector Base Voltage30 V
Collector Current Continuous200 mA
Collector Cutoff Current<15 nA
Collector Emitter Voltage>25 V
DC Current Gain420-800
Emitter Base Voltage>5 V
Input Impedance6.0-15 KΩ
Operating and Storage Junction Temperature Range- 65 to +200 ºC
Output Admittance110 umhos max.
Power Dissipation @ Ta=25ºC300 mW
Power Dissipation @ Tc=25ºC750 mW

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Specifications, Files, and Documents

PNG: Pinout (bottom view) Pinout (bottom view)13.3 KB

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Product Reviews

5.00 out of 5 based on 1 reviews
clint - May 24th, 2022
5 out of 5

Fast delivery on this sought after transistor which has huge amounts of gain. Looking forward to modding out my projects. Thanks!