Transistor - MJ15022, NPN, Power Transistor

Transistor - MJ15022, NPN, Power Transistor

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Transistor MJ15022, TO-3 Case, NPN

PowerBase power transistors designed for high power audio, disk head positioners and other linear applications.


  • High Safe Operating Area (100% Tested) −2 A @ 80 V
  • High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc
Item ID:
Product Measurements by Type
Base-emitter On Voltage (VBE(on))2.2 V
Base Current - Continuous (IB)5 A
Collector-base Voltage (VCBO)350 V
Collector-emitter Saturation Voltage (VCE(sat))1.4 V
Collector-emitter Sustaining Voltage (VCEO(sus))200 V
Collector-emitter Voltage (VCEO)200 V
Collector-emitter Voltage (VCEX)400 V
Collector Current (IC)15 A
Collector Current, peak (ICpeak)30 A
Collector Cut-off Current (ICEX)250 μA
Current Gain - Bandwidth Product (fT)4 MHz
D.C. Current Gain (hFE)15 - 60
Emitter-base Voltage (VEBO)5 V
Emitter Cut-off Current (IEBO)500 μA
Operating And Storage Temperature (TJ, TSTG)-65°C to 200°C
Output Capacitance (COB)500 pF
Thermal Resistance, junction to case (RθJC)0.70°C/W
Total Device Dissipation @ TA = 25°C (PD)250 W
Packaging Information
Packaging Dimensions1.6 in. × 1 in. × 0.9 in.
Weight (Packaging)0.026 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet69.27 KB

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