Transistor - MPSA13, Darlington 500mA 30V NPN
NPN Darlington transistor (TO-92 package) - designed for applications requiring extremely high current gain at collector currents to 1.0A.
- Max collector to emitter voltage = 30 V
- Max collector to base voltage = 30 V
- Max emitter to base voltage = 10 V
- Max collector current = 1.2 A (continuous)
RoHS Compliant
Base-emitter On Voltage (VBE(on)) | 2.0 V | |
Collector-emitter Breakdown Voltage (V(BR)CES) | 30 V | |
Collector-emitter Saturation Voltage (VCE(sat)) | 1.5 V | |
Collector Current (IC) | 500 mA | |
Collector Cut-off Current (ICBO) | 100 nA | |
Collector−base Voltage (VCBO) | 30 V | |
Collector−emitter Voltage (VCES) | 30 V | |
Current Gain - Bandwidth Product (fT) | 125 MHz | |
D.C. Current Gain (hFE) | 5,000 | |
Emitter-base Voltage (VEBO) | 10 V | |
Emitter Cut-off Current (IEBO) | 100 nA | |
Operating And Storage Temperature (TJ, TSTG) | -55°C to 150°C | |
Thermal Resistance, junction to ambient (RθJA) | 200°C/mW | |
Thermal Resistance, junction to case (RθJC) | 83.3°C/mW | |
Total Device Dissipation @ TA = 25°C (PD) | 625 mW |
Packaging Dimensions | 0.75 in. × 0.174 in. × 0.135 in. | |
Weight (Packaging) | 0.001 lbs. |
![]() | All Models |
My Project Lists
Specifications, Files, and Documents
Questions and Answers
No questions have been asked about this product.
Product Reviews
Very high quality transistors and just pennies each. Where are you going to find a deal like these.