Transistor - TIP41C, NPN Epitaxial Transistor

Transistor - TIP41C, NPN Epitaxial Transistor

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Transistor TIP41C, TO-220 Case.

NPN Epitaxial Silicon Transistor

Complementary to TIP42 (P-QTIP42C)

Max ratings:

  • Collector-Base voltage = 100V
  • Collector-Emitter Voltage = 100V
  • Emitter-Base Voltage = 5V
  • Collector current (DC) = 6A
  • Collector current (Pulse) = 10A
  • Base current = 2A
Item ID:
RoHS Compliant
Product Measurements by Type
Base-emitter Saturation Voltage (VBE(sat))2.0 V
Base Current (IB)2 A
Collector-base Voltage (VCBO)100 V
Collector-emitter Saturation Voltage (VCE(sat))1.5 V
Collector-emitter Sustaining Voltage (VCEO(sus))100 V
Collector-emitter Voltage (VCEO)100 V
Collector Current (IC)6 A
Collector Current, pulse (ICP)10 A
Collector Cut-off Current (ICBO)0.7 mA
Collector Dissipation (PC)65 W
Current Gain - Bandwidth Product (fT)3.0 MHz
D.C. Current Gain (hFE)15 - 75
Emitter-base Voltage (VEBO)5 V
Emitter Cut-off Current (IEBO)1 mA
Operating Temperature (TJ)150°C
storage temperature (Tstg)-65°C to 150°C
Packaging Information
Packaging Dimensions1.3 in. × 0.5 in. × 0.3 in.
Weight (Packaging)0.004 lbs.

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Specifications, Files, and Documents

PDF: Specification Sheet Specification Sheet187.84 KB

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